A 600°C-Ready Transistor Emerges from Kyoto University

Silicon carbide transistor sets a new high-temperature milestone

According to НВ — Техно: Conventional silicon chips often cannot cope with extreme heat, making robust alternatives crucial for harsh environments. Researchers at Kyoto University have introduced a silicon carbide (SiC) junction field-effect transistor (JFET) capable of stable operation up to 600 °C (1112 °F). This innovation could benefit electronics used in aircraft engines, deep geothermal drilling, and spacecraft exploring distant regions.

What makes the new transistor design better

The JFET places its gate beneath the current channel, improving threshold-voltage control. At 400 °C (673 K), the difference between the expected and measured threshold voltage was less than 0.1 volt, showing strong precision under heat.

To block substrate leakage, the researchers added an insulating layer built from a double p-n junction well. This helps the transistor remain reliable even at critical temperatures. At 600 °C (873 K), it maintained an on/off switching ratio above 1000, an impressive result for high-temperature electronics.

This development marks an important step toward more efficient and dependable electronic components that must function in extreme thermal environments.

Because silicon carbide handles heat so well, bulky cooling and thermal-protection systems may no longer be necessary, simplifying device designs, lowering costs, and improving overall system efficiency. The Kyoto University technology could become the basis for new aviation, geothermal energy, and space exploration electronics, enhancing performance in critical conditions and enabling fresh innovations.